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| ISL9K30120G3 May 2002 ISL9K30120G3 30A, 1200V StealthTM Dual Diode General Description The ISL9K30120G3 is a StealthTM dual diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49415. Features * Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 4.5 * Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 56ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V * Avalanche Energy Rated Applications * Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Motor Drive FWD * SMPS FWD * Snubber Diode Package JEDEC STYLE TO-247 ANODE 2 CATHODE CATHODE (BOTTOM SIDE METAL) ANODE 1 Symbol K A1 A2 Device Maximum Ratings (per leg) TC = 25C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 80oC) Total Device Current (Both Legs) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 Ratings 1200 1200 1200 30 60 70 325 166 20 -55 to 150 300 260 Units V V V A A A A W mJ C C C CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. (c)2002 Fairchild Semiconductor Corporation ISL9K30120G3 Rev. A ISL9K30120G3 Package Marking and Ordering Information Device Marking K30120G3 Device ISL9K30120G3 Package TO-247 Tape Width N/A Quantity 30 Electrical Characteristics (per leg) TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current VR = 1200V TC = 25C TC = 125C 100 1.0 A mA On State Characteristics VF Instantaneous Forward Voltage IF = 30A TC = 25C TC = 125C 2.8 2.6 3.3 3.1 V V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A 115 pF Switching Characteristics trr trr IRM(REC) QRR trr S IRM(REC) QRR trr S IRM(REC) QRR dIM/dt Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Maximum di/dt during tb IF = 1A, dIF/dt = 100A/s, VR = 15V IF = 30A, dIF/dt = 100A/s, VR = 15V IF = 30A, dIF/dt = 200A/s, VR = 780V, TC = 25C IF = 30A, dIF/dt = 200A/s, VR = 780V, TC = 125C IF = 30A, dIF/dt = 1000A/s, VR = 780V, TC = 125C 45 80 269 7.5 930 529 6.2 11 3.0 260 4.8 30 3.4 520 56 100 ns ns ns A nC ns A C ns A C A/s Thermal Characteristics RJC RJA Thermal Resistance Junction to Case TO-247 0.75 30 C/W C/W Thermal Resistance Junction to Ambient TO-247 (c)2002 Fairchild Semiconductor Corporation ISL9K30120G3 Rev. A ISL9K30120G3 Typical Performance Curves (per leg) 60 1000 150oC 150oC 125oC IR, REVERSE CURRENT (A) 50 IF, FORWARD CURRENT (A) 100 125oC 100oC 10 75oC 40 30 100oC 25oC 1 20 10 0.1 25oC 0 0.5 1 1.5 2 2.5 3 3.5 4 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VF , FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (KV) Figure 1. Forward Current vs Forward Voltage 750 VR = 780V, TC = 125oC Figure 2. Reverse Current vs Reverse Voltage 750 VR = 780V, TC = 125oC 625 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) tb at dIF/dt = 200A/s, 500A/s, 800A/s 500 625 tb at IF = 60A, 30A, 15A 500 375 375 250 250 125 ta at dIF/dt = 200A/s, 500A/s, 800A/s 125 ta at IF = 60A, 30A, 15A 0 0 10 20 30 40 50 60 IF , FORWARD CURRENT (A) 0 200 400 600 800 1000 1200 dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 3. ta and tb Curves vs Forward Current 40 IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) VR = 780V, TC = 125oC 40 Figure 4. ta and tb Curves vs dIF /dt VR = 780V, TC = 125oC 35 30 dIF/dt = 800A/s dIF/dt = 500A/s 30 20 25 IF = 60A 20 IF = 30A 15 IF = 15A dIF/dt = 200A/s 10 0 0 10 20 30 40 50 60 IF , FORWARD CURRENT (A) 10 200 400 600 800 1000 1200 dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Maximum Reverse Recovery Current vs Forward Current Figure 6. Maximum Reverse Recovery Current vs dIF /dt (c)2002 Fairchild Semiconductor Corporation ISL9K30120G3 Rev. A ISL9K30120G3 Typical Performance Curves (per leg) (Continued) S, REVERSE RECOVERY SOFTNESS FACTOR 9 VR = 780V, TC = 125oC 8 IF = 60A 7 QRR, REVERSE RECOVERED CHARGE (C) 6.0 VR = 780V, TC = 125oC 5.6 IF = 60A 5.0 4.5 4.0 IF = 30A 3.5 3.0 2.5 2.0 200 IF = 15A 6 IF = 30A 5 IF = 15A 4 3 200 400 600 800 1000 1200 dIF /dt, CURRENT RATE OF CHANGE (A/s) 400 600 800 1000 1200 dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 7. Reverse Recovery Softness Factor vs dIF /dt 1600 CJ , JUNCTION CAPACITANCE (pF) 1400 1200 1000 800 600 400 200 0 0.03 f = 1MHZ Figure 8. Reverse Recovery Charge vs dIF/dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) -14 IF = 30A, VR = 780V, dIF /dt = 500A/s IRM(REC) -16 400 350 -18 300 -20 tRR -22 25 250 0.1 1 10 100 50 75 100 125 200 150 VR , REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (oC) Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. Maximum Reverse Recovery Current and trr vs Case Temperature IF(AV), AVERAGE FORWARD CURRENT (A) 35 30 25 20 15 10 5 0 60 70 80 90 100 110 120 130 140 150 TC, CASE TEMPERATURE (oC) Figure 11. DC CURRENT DERATING CURVE (c)2002 Fairchild Semiconductor Corporation ISL9K30120G3 Rev. A t, RECOVERY TIMES (ns) ISL9K30120G3 Typical Performance Curves (per leg) (Continued) DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 1.0 THERMAL IMPEDANCE ZJA, NORMALIZED PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 0.01 10-5 10-4 Figure 12. Normalized Maximum Transient Thermal Impedance Test Circuit and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE + MOSFET VDD 0 0.25 IRM IRM dIF dt ta trr tb VGE t1 t2 - Figure 13. trr Test Circuit Figure 14. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV VAVL IL IL t0 t1 t2 t Figure 15. Avalanche Energy Test Circuit Figure 16. Avalanche Current and Voltage Waveforms (c)2002 Fairchild Semiconductor Corporation ISL9K30120G3 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series DISCLAIMER FAST a FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC a OPTOPLANAR PACMAN POP Power247 PowerTrench a QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER a UHC SMART START UltraFET a SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. H5 |
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